2SC5765 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS

UTC2SC5765 NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER AMPLIFIER
STROBO FLASH
DESCRIPTION
* medium power amplifier applications
* strobo flash applications
1
FEATURES
*Low Saturation Voltage: VCE(sat) = 0.27 V (max.),
(Ic = 3A / IB =60 mA)
TO-92SP
1.EMITTER 2.COLLECTOR 3.BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
RATING
Collector-Base Voltage
VCBO
15
Collector-Emitter Voltage
VCEO
10
Emitter-Base Voltage
VEBO
7
Collector Current
Ic
5(DC)
9(PLUSED)
Collector Power Dissipation
Pc(Note 1)
550
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 ~ +150
Note 1: When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm)
UNIT
V
V
V
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN
Collector-Emitter Breakdown Voltage
BVCEO
IC =1mA, IB= 0
10
Collector Cut-Off Current
ICBO
VCB=15V, IE= 0
Emitter Cut-Off Current
IEBO
VEB= 5V, Ic=0
DC Current Gain
hFE 1 (Note 2) VCE=1.5V,Ic=0.5A
450
hFE2 (Note 2) _{VCE=1.5V,Ic=2A}
320
hFE3 (Note 2) VCE=1.5V,Ic=5A
170
Collector-Emitter Saturation Voltage VCE(sat) (note 2) Ic=3A,IB=60mA
Collector Output Capacitance
Note 2: Pulse test
Cob
VCB=10V, IE= 0, f=1MHz
TYP
25
MAX
0.1
0.1
700
0.27
UNIT
V
μA
μA
V
pF
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