2SC5200 Datasheet, PDF (2/3 Pages) Unisonic Technologies – POWER AMPLIFIER APPLICATIONS

UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
-20
-16
-12
-8
-4
0
0
IC - VCE
COMMON EMITTER
TC =25℃
800
600
400
300250
200
150
100
IB = 10mA
50
40
30
20
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V CE (V)
-20
COMMON EMITTER
VCE = 5V
-16
IC - VBE
-12
-8
-4
0
0
TC =100℃
25
-25
0.4
0.8
1.2
1.6
2.0
BASE-EMITTER VOLTAGE, VBE (V)
VCE(sat) - IC
3
1
0.3
0.1 -25
0.03
0.01
0.01
TC =100℃
25
COMMON EMITTER
IC / IB = 10
0.1
1
10
100
COLLECTOR CURRENT, IC (A)
300 _{TC =100℃}
100
25
-25
30
10
hFE - IC
3
1
0.01
0.1
COMMON EMITTER
IC / IB = 10
1
10
100
COLLECTOR CURRENT, IC (A)
SAFE OPERATING AREA
50
IC MAX. (PULSED)※
30
IC MAX.
1ms※
(CONTINUOUS)
10ms※
10
DC OPERATION
5
TC =25℃
3
100ms※
1
0.5
0.3
※SINGLE NONREPETITIVE
PULSE TC = 25℃
0.1 ^{CURVES MUST BE}
DERATED LINEARLY
0.05 ^{WITH INCREASE IN}
TEMPERATURE.
0.03
3
10
30
100
VCEO MAX.
300
1000
COLLECTOR-EMITTER VOLTAGE, VCE (V)
UTC UNISONIC TECHNOLOGIES CO. LTD ²
QW-R214-005,A