2SC5200 Datasheet, PDF (1/3 Pages) Unisonic Technologies – POWER AMPLIFIER APPLICATIONS

UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
TO-3PL
*Pb-free plating product number: 2SC5200L
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
PARAMETER
SYMBOL
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
Collector Current
V_EBO
I_C
Base Current
I_B
Collector Power Dissipation (Tc=25℃)
P_C
Junction Temperature
T_J
Storage Temperature Range
Tstg
RATINGS
230
230
5
15
1.5
150
150
-55 ~ 150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tc=25℃)
PARAMETER
SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage V_{(BR) CEO} I_C= 50mA, I_B=0
Collector-Emitter Saturation Voltage V_{CE (sat)} I_C= 8A_, I_B= 0.8A
Base -Emitter Voltage
V_BE
V_CE= 5V, I_C= 7A
Collector Cut-off Current
I_CBO V_CB = 230V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB= 5V, I_C=0
DC Current Gain
h_FE1 V_CE= 5V, I_C= 1A
h_FE2 V_CE= 5V, I_C= 7A
Transition Frequency
fT
V_CE= 5V, I_C= 1A
Collector Output Capacitance
Cob V_CB= 10V, I_E=0, f=1MHz
Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160
MIN TYP MAX UNIT
230
V
0.40 3.0
V
1.0
1.5
V
5.0 ^μA
5.0 ^μA
55
160
35
60
30
MHz
200
pF
CLASSIFICATION OF HFE1
RANK
Range
R
55 ~ 110
O
80 ~ 160
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R214-005,A