2SC4027 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH-VOLTAGE SWITCHING APPLICATIONS

UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
R
hFE
100~200
S
140~280
T
200~400
SWITCHING TIME TEST CIRCUIT
INPUT
PW =20μs
D.C.≦1%
50Ω
IB1
RB
IB2
VR
OUTPUT
RL
14kΩ
+
100μF
+
470μF
-5V
10IB1= -10IB2=Ic=0.7A
100V
IC-VCE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
30mA ^{40mA 50mA}
20mA
10mA
5mA
2mA
1mA
IB=0
1
2
3
4
5
Collector to Emitter Voltage, VCE (V)
1.6
VCE=5V
IC-VBE
1.2
0.8
0.4
0
0
0.2
0.4 0.6 0.8 1.0 1.2
Collector to Emitter Voltage, VBE (V)
IC-VCE
1.0
4.0mA
4.5mA
0.8
3.5mA
3.0mA
2.5mA
0.6
2.0mA
0.4
0.2
0
0
1.5mA
1.0mA
0.5mA
IB=0
10
20
30
40
50
Collector to Emitter Voltage, VCE (V)
1000
7
5
3
2
100
7
5
3
2
hFE-Ic
Ta=75^℃
25^{℃ -25℃}
VCE=5V
10
7 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, Ic (A)
23
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R209-018,A