2SC4027 Datasheet, PDF (1/4 Pages) Unisonic Technologies – HIGH-VOLTAGE SWITCHING APPLICATIONS

UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
APPLICATIONS
FEATURES
*High voltage and large current capacity.
*Fast switching time.
APPLICATION
*Converters, inverters, color TV audio output.
*Complementary to 2SA1522.
1
TO-252
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
Ic
Collector Current (Pulse)
Icp
Collector Dissipation
Tc=25°C
Pc
Junction Temperature
Tj
Storage Temperature
Tstg
1:BASE 2: COLLECTOR 3: EMITTER
RATINGS
180
160
6
1.5
2.5
1
15
150
-55 ~+150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
V(BR)CBO Ic=10A,IE=0
V(BR)CEO Ic=1mA,RBE=∞
Emitter to Base Breakdown Voltage
V(BR)EBO IE=10µA,Ic=0
Collector Cutoff Current
ICBO
VCB=120V,IE=0
Emitter Cutoff Current
DC Current Gain
IEBO
hFE1
hFE2
VEB=4V,Ic=0
VCE=5V,Ic=100mA
VCE=5V,Ic=10mA
Collector-to-Emitter Saturation Voltage
VCE(sat) Ic=500mA,IB=50mA
Base-to-Emitter Saturation Voltage
VBE(sat) Ic=500mA,IB=50mA
Gain-Bandwidth Product
fT
VCE=10V,Ic=50mA
Output Capacitance
Cob
VCB=-10V,f=1MHz
Turn-On Time
ton
See specified Test Circuit
Storage Time
tstg
Fall Time
tf
MIN TYP MAX UNIT
180
V
160
V
6
V
1.0 µA
1.0 µA
100
400
80
0.13 0.45 V
0.85 1.2 V
120
MHz
12
pF
60
µs
1.2
µs
80
µs
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R209-018,A