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| UMBF170 Datasheet, PDF (1/2 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE | |||
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UNISONIC TECHNOLOGIES CO., LTD
UMBF170
Preliminary
N-CHANNEL ENHANCEMENT
MODE
Power MOSFET
 DESCRIPTION
The UMBF170 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
 FEATURES
* RDS(ON)<5â¦@VGS=10V
* RDS(ON)<5.3â¦@VGS=4.5V
* Low Reverse Transfer Capacitance ( CRSS = typical 7.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL
3.Drain
3
1
2
SOT-23-3
(JEDEC TO-236)
2.Gate
1.Source
 ORDERING INFORMATION
Ordering Number
UMBF170G-AE2-R
Package
SOT-23-3
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
 MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-291.b
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