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UM8517P Datasheet, PDF (3/5 Pages) Union Semiconductor, Inc. – Battery-Powered Portable Equipments
UM8517
Typical Characteristics (TJ=25°C, unless otherwise noted)
Typical Output Characteristics
9
VVGgS=s=-1-1.5.5VV
8
VVGgS=s=-2-2.0.0VV
VVGgS=s=-2-2.5.5VV
7
VVGgS=s=-4-4.5.5VV
6
5
4
3
2
1
0
0
1
2
3
4
5
6
-VDS, Drain-to-Source Voltage (V)
Typical Transfer Characteristics
4.5
4.0
VDS=-10.0V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
-VGS, Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
300
ID=-1.0A
250
200
150
100
50
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS, Gate-to-Source Voltage (V)
Diode Forward Voltage vs. Current
1000
900
800
700
600
500
400
300
200
100
0
0
VGS=0V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
-VSD, Source-to-Drain Voltage (V)
On-Resistance vs. Ambient Temperature
1.6
ID=-0.5A
1.4
1.2
1.0
0.8
0.6
-50 -25
0
25 50 75 100 125
TA, Ambient Temperature (°C)
Threshold Voltage vs. Ambient Temperature
1.0
0.9
ID=-250µ A
0.8
0.7
0.6
0.5
0.4
-50 -25
0 25 50 75 100 125 150
TA, Ambient Temperature (°C)
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