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UM8517P Datasheet, PDF (2/5 Pages) Union Semiconductor, Inc. – Battery-Powered Portable Equipments
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UM8517
Electrical Characteristics
(TJ=25°C, unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
Off Characteristics
Drain to Source
BVDSS
Breakdown
VGS=0V, ID=-250μA
-20
Voltage
IDSS
Zero Gate Voltage
Drain Current
VDS=-20V, VGS=0V
IGSS
Gate-to-Source
Leakage Current
VGS=±12V, VDS=0V
V
-1 μA
±100 nA
On Characteristics
RDS(ON)
VGS(TH)
gfs
Static
Drain-to-Source
On-Resistance
Gate Threshold
Voltage
Forward
Transconductance
Dynamic Characteristics
VGS=-4.5V, ID=-1.0A
VGS=-2.5V, ID=-0.5A
VDS= VGS , ID=-250μA
VDS=-5V, ID=-2.0A
90
110
mΩ
130 150
-0.4 -0.7
-1
V
6
S
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
Switching Characteristics
Qg(TH)
QGS
Threshold Gate
Charge
Gate-Source
Charge
QGD Gate-Drain Charge
td(on)
Turn-on Delay
Time
tr
Rise Time
td(off)
Turn-off Delay
Time
tf
Fall Time
VGS=0V, VDS=-15V,
f=1.0MHz
VDS=-10V, VGS=-4.5V,
ID=-1.0A
VGS=-4.5V, VDS=-10V,
ID=-1.0A
RGEN=10Ω
405
75
pF
55
3.3
0.7
nC
1.3
11
35
ns
30
10
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Forward Diode
Voltage
VGS=0V, IS=-1A
-0.7 -1.2 V
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