UM5075_14 Datasheet, PDF (3/8 Pages) Union Semiconductor, Inc. – Single Line ESD Protection Diode Array

UM5075/5079
Electrical Characteristics
(T=25°C, Device for 7.0V Reverse Stand-off Voltage)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Stand-Off
Voltage
Reverse Breakdown
Voltage
Reverse Leakage
Current
V_RWM
V_BR
I_R
7
V
It = 1mA
7.3 7.6 8.0 V
V_RWM = 7V, T=25°C
0.005 1
μA
Clamping Voltage
V_C
I_PP = 5A, t_p = 8/20μs
I_PP =12A, t_p = 8/20μs
11.4
V
16.4
Forward Voltage
V_F
I_F = 10mA
0.8
V
Junction Capacitance
C_J
V_R = 0V, f = 1MHz
Junction Capacitance
C_J
V_R = 2.5V, f = 1MHz
40
50 pF
30
40 pF
Typical Operating Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
1
0.1
0.01
0.1
1
10
100
1000
Pulse Duration - tp(uS)
Clamping Voltage vs. Peak Pulse Current
17
16
15
14
13
12
11
10
Waveform
parameters:
9
tr=8uS
td=20uS
8
0
2
4
6
8
10
12
Peak Pulse Current - Ipp(A)
Forward Voltage vs. Forward Current
7
6
5
4
3
2
1
2
4
6
8
Forward Current - If(A)
Waveform
parameters:
tr=8uS
td=20uS
10
12
Junction Capacitance vs. Reverse Voltage
50
45
40
35
30
0
1
2
3
4
5
Reverse Voltage (V)
________________________________________________________________________
http://www.union-ic.com Rev.02 Dec.2014
3/8