UM5062 Datasheet, PDF (3/6 Pages) Union Semiconductor, Inc. – Dual Line ESD Protection Diode Array

UM5062
Electrical Characteristics
(T=25°C, Device for 5.0V Reverse Stand-off Voltage)
PARAMETER
SYMBOL
CONDITIONS
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
V_RWM
V_BR
It = 1mA
Reverse Leakage Current
I_R
VRWM = 5V, T=25°C
Clamping Voltage
I_PP = 5A, t_p = 8/20μS
V_C
I_PP =11A, t_p = 8/20μS
Forward Voltage
Junction Capacitance
Junction Capacitance
V_F
I_F = 10mA
C_J
V_R = 0V, f = 1MHz
C_J
V_R = 2.5V, f = 1MHz
MIN TYP
6 6.8
0.8
40
30
MAX
5
7.2
0.1
9.1
13
55
40
UNIT
V
V
μA
V
V
pF
pF
Typical Operating Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
1
0.1
0.02
0.04 0.1
1
10
100
1000
Pulse Duration - tp(uS)
Forward Voltage vs. Forward Current
Clamping Voltage vs. Peak Pulse Current
13
12
11
10
9
8
7
6
0
Waveform
parameters:
tr=8uS
td=20uS
2
4
6
8
10
Peak Pulse Current - Ipp(A)
Junction Capacitance vs. Reverse Voltage
6
5
4
3
2
1
2
Waveform
parameters:
tr=8uS
td=20uS
4
6
8
10
Forward Current - If(A)
50
45
40
35
30
0
1
2
3
4
5
Reverse Voltage (V)
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http://www.union-ic.com Rev.01 Nov.2008
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