UM5062 Datasheet, PDF (1/6 Pages) Union Semiconductor, Inc. – Dual Line ESD Protection Diode Array

UM5062
Dual Line ESD Protection Diode Array
UM5062 QFN3 1.4×1.1
General Description
The UM5062 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable
applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional
area junctions for conducting high transient currents, offers desirable electrical characteristics for
board level protection, such as fast response time, lower operating voltage, lower clamping voltage
and no device degradation when compared to MLVs.
The UM5062 ESD protection diode protects sensitive semiconductor components from damage or
upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5062 is
available in a QFN3 1.4mm×1.1mm package with working voltages of 5 volt.
It gives designer the flexibility to protect one or two unidirectional line in applications where arrays
are not practical. Additionally, it may be “sprinkled” around the board in applications where board
space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2,
Level 4 (±15kV air, ±8kV contact discharge).
Applications
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal
Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Cordless Phones
Digital Cameras
Peripherals
MP3 Players
Features
Transient protection for data & power lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
Small package for use in portable electronics
Suitable replacement for MLV’s in ESD protection
applications
Protect one or two I/O lines
Low clamping voltage
Stand off voltages: 5V
Low leakage current
Solid-state silicon-avalanche technology
Pin Configurations
(Bottom View)
(Top View)
XX: Weekly Code
UM5062
QFN3 1.4×1.1
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http://www.union-ic.com Rev.01 Nov.2008
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