CHA8012-99F Datasheet, PDF (4/8 Pages) United Monolithic Semiconductors – C Band High Power Amplifier

CHA8012-99F
C Band High Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +8V, Idq = 2.1A Pulsed mode
Pulse conditions: Pulse length=25µs Period=250µs
Linear Gain versus Frequency
25
24
23
22
21
20
19
18
17
16
15
4.8
5
5.2
5.4
5.6
5.8
6
6.2
Frequency (GHz)
Pout @ 3dBcomp versus Frequency
45
43
41
39
37
35
33
31
29
27
25
4.8
5
5.2
5.4
5.6
5.8
6
6.2
Frequency (GHz)
Ref.: DSCHA80123332 - 28 Nov 13
4/8
Specifications subject to change without notice
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