CHA8012-99F Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – C Band High Power Amplifier

CHA8012-99F
C Band High Power Amplifier
GaAs Monolithic Microwave IC
Description
CHA8012-99F is a monolithic two-stage
GaAs High Power Amplifier (HPA) designed
for C band applications. The HPA provides
V+
typically 12W of output power on the 5.2 to
6.0GHz frequency band associated with 43%
of power added efficiency at 3dB gain
compression. The small signal gain is 22dB.
The overall power supply is of 8V/2.1A.
In
Out
The circuit is dedicated to defense and space
STG1 STG2
applications and is also well suited for a wide
range of microwave and millimeter wave
applications and systems.
This device is manufactured using 0.25µm
Power pHEMT process, including via holes
through the substrate and air bridges. It is
V-
available in chip form.
Main Features
■ Broadband performances: 5.2-6GHz
■ High output power: +41.5dBm
■ High PAE: 43%
■ Linear Gain: 22dB
■ DC bias: Vd=8Volt @Id=2.1A
■ Chip size 5.61x4.51x0.07mm
Main Electrical Characteristics
Tamb.= +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs)
Symbol
Parameter
Min Typ Max Unit
Freq
Frequency range
5.2
6.0 GHz
Gain
Linear Gain
22
dB
P_3dBcomp Output power @ 3dB compression
41.5
dBm
PAE_3dB
Power Added Efficiency @ 3dB comp.
43.0
%
Ref. : DSCHA80123332 - 28 Nov 13
1/8
Specifications subject to change without notice
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