CHR3762-QDG Datasheet, PDF (3/16 Pages) United Monolithic Semiconductors – 5.5-9GHz Integrated Down Converter

5.5-9GHz Integrated Down Converter
CHR3762-QDG
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
VD Drain bias voltage
3.5
V
Id
Drain bias current
VG1,VG2 1^st stage LNA gate bias voltages
150
mA
-2 to +0.4
V
VG3 LO buffer gate bias voltage
-2 to +0.4
V
VG4
P_RF
Mixer gate bias voltage
Maximum peak input power overdrive ⁽²⁾
-2 to +0.4
+15
V
dBm
P_LO Maximum LO input power
+10
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
VDx
13,15,18
Id
13,15,18
VG1
12
VG2
14
VG3
17
VG4
19
Parameter
DC drain voltages
Total drain current
1^st stage LNA DC gate voltage
2^nd stage LNA DC gate voltage
LO buffer DC gate voltage
Mixer DC gate voltage
Values Unit
3
V
100
mA
-0.45
V
-0.35
V
-0.45
V
-1
V
Ref. : DSCHR3762-QDG2335 - 30 Nov 12
3/16
Specifications subject to change without notice
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