CHM2179B Datasheet, PDF (3/9 Pages) United Monolithic Semiconductors – W-band Mixer

W-band Mixer
CHM2179b
Electrical Characteristics
Full operating temperature range, used according to section “Typical assembly and bias
configuration”
Symbol
Parameter
Min
Typ
F_lo, F_rf LO, RF frequency
76
F_if
IF frequency range
[DC;100]
Lc
Conversion loss
5
8
P_lo
LO input power
3
5.5
P_RF_1dB RF input power at 1 dB
-3
0
VSWR_lo LO port VSWR (50Ω)
2:1
VSWR_rf RF port VSWR (50Ω)
2:1
IMP_if
IF load impedance (1)
200
I_lo/rf
LO/RF isolation
16
22
R_lo_am LO AM noise rejection (SSB)
20
27
NF
Noise figure for IF=1kHz (2)
35
Noise figure for IF=10kHz (2)
29
Noise figure for IF=100kHz (2)
21.5
Noise figure for IF=200kHz (2)
18
+V
Positive supply voltage (3)
4.5
+I
Positive supply current (3)
1.5
Top
Operating temperature range
-40
Max
77
10
8
2.5:1
2.5:1
40
34
26.5
23
2.5
+100
Unit
GHz
MHz
dB
dBm
dBm
Ω
dB
dB
dB
dB
dB
dB
V
mA
°C
(1) The IF optimum load for conversion loss is 200Ω. For minimum noise figure this load can be lower, the
best results have been obtained on 50Ω.
(2) Measured on 200Ω IF impedance.
(3) An external resistor controls the bias current (see section “Typical Assembly and Bias Configuration”)
Absolute Maximum Ratings (1)
Symbol
Parameter
Values
Unit
+V
Supply voltage
6
V
+I
Supply current
2.5
mA
P_lo Maximum peak input power overdrive at LO port (2)
10
dBm
P_rf_cw Maximum input power at RF port (3)
3
dBm
Tstg Storage temperature range
-55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCHM2179b6013 - 13 Jan 06
3/9
Specifications subject to change without notice
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