CHA3666-QAG Datasheet, PDF (3/12 Pages) United Monolithic Semiconductors – 5.8-17GHz Low Noise Amplifier

5.8-17GHz Low Noise Amplifier
CHA3666-QAG
Thermal data based on board defined page 11
DEVICE THERMAL SPECIFICATION : CHA3666-QAG P1N2=GND
Max. junction temperature (Tj max)
:
153 °C
Max. continuous dissipated power @ Tcase= 85 °C :
0.32 W
=> Pdiss derating above Tcase= 85 °C :
5 mW/°C
Device thermal resistance (Rth)
:
214 °C/W
Min. package back side operating temperature*
:
-40 °C
Max. package back side operating temperature*
:
85 °C
Min. storage temperature
:
-55 °C
Max. storage temperature
:
125 °C
*Tcase=Package back side temperature measured under the die-attach-pad.
Pdiss. Max. (W)
-50
-25
0
25
50
Tcase (°C)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
75
100
125
Tcase
Example of QFN 16L 3x3
back-side view, temperature
reference point (Tcase) location.
DEVICE THERMAL SPECIFICATION : CHA3666-QAG P1P2=GND
Max. junction temperature (Tj max)
:
153 °C
Max. continuous dissipated power @ Tcase= 85 °C :
0.34 W
=> Pdiss derating above Tcase= 85 °C :
5 mW/°C
Device thermal resistance (Rth)
:
201 °C/W
Min. package back side operating temperature*
:
-40 °C
Max. package back side operating temperature*
:
85 °C
Min. storage temperature
:
-55 °C
Max. storage temperature
:
125 °C
*Tcase=Package back side temperature measured under the die-attach-pad.
Pdiss. Max. (W)
-50
-25
0
25
50
Tcase (°C)
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
75
100
125
Tcase
Example of QFN 16L 3x3
back-side view, temperature
reference point (Tcase) location.
Ref. : DSCHA3666-QAG8108 - 17 Apr 08
3/12
Specifications subject to change without notice
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