CHA3666-QAG Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 5.8-17GHz Low Noise Amplifier

CHA3666-QAG
5.8-17GHz Low Noise Amplifier
Electrical Characteristics
Temp = +25°C, P1, N2 = GND (1)
Symbol
Fop
G
∆G
NF
IS11I
IS22I
IP3
P1dB
Vd1, 2
Id
Parameter
Operating frequency range
Gain (2)
Gain flatness
Noise figure (2)
Input return loss (2)
Ouput return loss (2)
3rd order intercept point
Output power at 1dB gain comp (2)(3).
Drain bias voltage
Drain bias current
Min
5.8
19
15
60
Typ
21
±0.5
1.8
2.5:1
2.0:1
26
16
4
80
Max
17
2
2.7:1
2.2:1
100
Unit
GHz
dB
dB
dB
dBm
dBm
V
mA
(1) The other leads are not connected.
(2) These values are representative of on board measurements as defined on the drawing
96272 (see below).
(3) P1dB can be increased (+0.5dBm) when P1& P2 are connected to ground and the other
leads non-connected. In this case Id is typically of 85mA.
Absolute Maximum Ratings (1)
Temp = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.5
V
Pin
RF input power
10
dBm
Top
Operating temperature range
-40 to +85
°C
Tj
Junction temperature
175
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. DSCHA3666-QAG8108 - 17 Apr 08
2/12
Specifications subject to change without notice
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