CHR3663-QEG Datasheet, PDF (2/16 Pages) United Monolithic Semiconductors – 17-24GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package

CHR3663-QEG
17–24 GHz Down Converter
Electrical Characteristics
Tamb = +25°C, VD=VDL= 4.5V
Symbol
F_RF
F_LO
F_IF
G_c
∆G
Parameter
RF frequency range
LO frequency range
IF frequency range
Conversion gain@ min. attenuation (1)
Gain control range
Min Typ Max Unit
17
24.0 GHz
7
14.0 GHz
DC
3.5 GHz
11
dB
15
dB
NF
Noise Figure@ min. attenuation
3.5
dB
Im_rej Image rejection (1)
15
dBc
P_LO
LO Input power
IIP3 Input IP3@ all gain range (∆G)
0
dBm
3
dBm
2LO/RF 2LO leakage at RF port @ max. gain
-40
dBm
VD, VDL DC drain voltage
4.5
V
Id
Drain current
380
mA
VGL LNA DC gate voltage
-0.4
V
GC2, GC3 Gain control DC voltage
-2
+0,6 V
VGM Mixer DC gate voltage
-0.7
V
These values are representative of onboard measurements as defined on the drawing at page 15
(paragprah “Evaluation mother board”).
(1) An external combiner 90°is required on I / Q.
Note : Id not affected by GC2, GC3.
Absolute Maximum Ratings ⁽¹⁾
Tamb = +25°C
Symbol
Parameter
Vd
Id
VGL
VGM
GC1, GC2
P_RF
P_LO
Tch
Ta
Tstg
Maximum drain bias voltage
Maximum drain bias current
LNA DC gate voltage
Mixer DC gate voltage
Gain control voltage
Maximum peak input power overdrive
Maximum LO input power
Maximum channel temperature (1)
Operating temperature range
Storage temperature range
Values
5
450
-2.0 to +0.4
-2.0 to +0.4
-2.5 to + 0.8
10
10
175
-40 to +85
-55 to +125
Unit
V
mA
V
V
V
dBm
dBm
°C
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHR3663-QEG8317 - 12 Nov 08
2/16
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax: [phone]