CHK015A-SMA Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 15W Power Packaged Transistor

15W Power Packaged Transistor
CHK015A-SMA
Recommended DC Operating Ratings
Tcase= +25°C
Symbol
Parameter
Min
V_DS
V_{GS_Q}
Drain to Source Voltage 20
Gate to Source Voltage
I_{D_Q}
I_{D_MAX}
Quiescent Drain Current
Drain Current
I_{G_MAX}
Gate Current (forward
mode)
T_{j_MAX}
Junction temperature
(1) _{Limited by dissipated power}
Typ
-1.9
0.1
0.65
0
Max
50
0.35
(1)
8
Unit
V
V
A
A
mA
Conditions
V_D = 50V, I_{D_Q} = 100mA
V_D = 50V
V_D = 50V,
Compressed mode
Compressed mode
200 °C
DC Characteristics
Tcase= +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_P
I_{D_SAT}
I_{G_leak}
Pinch-Off Voltage
-3
-2
-1
V V_D = 50V, I_D =I_DSS/100
Saturated Drain Current
2.7 ⁽¹⁾
A V_D = 7V, V_G = 2V
Gate Leakage Current -1
(reverse mode)
mA V_D = 50V, V_G = -7V
V_BDS
Drain-Source
Break-down Voltage
200
V V_G = -7V, I_D = 20mA
R_TH
Thermal Resistance
6.4
°C/W
(1) _{For information, limited by ID_MAX , see on Absolute Maximum Ratings}
RF Characteristics
Tcase= +25°C, CW mode, F = 5.6GHz, V_DS=50V, I_{D_Q}=100mA
Symbol
Parameter
Min Typ Max Unit
G_SS
P_SAT
PAE
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
13
15
15
18
45
50
-
dB
-
W
-
%
G_{PAE_MAX} Associated Gain at Max PAE
11
-
dB
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB.
The typical performance achievable in more than 10% frequency band around 5.5GHz was
demonstrated using the reference board 61499546 presented hereafter.
Ref. : DSCHK015ASMA3021 - 21 Jan 13
2/12
Specifications subject to change without notice
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