CHK015A-SMA Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 15W Power Packaged Transistor

CHK015A-SMA
15W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK015A-SMA is an unmatched
packaged Gallium Nitride High Electron
Mobility Transistor. It offers general purpose
and broadband solutions for a variety of RF
power applications. It is well suited for multi-
purpose applications such as radar and
telecommunication
The CHK015A-SMA is developed on a
0.5µm gate length GaN HEMT process. It
requires an external matching circuitry.
The CHK015A-SMA is available in a
ceramic-metal flange power package
providing low parasitic and low thermal
resistance.
Main Features
■ Wide band capability: up to 6GHz
■ Pulsed and CW operating modes
■ High power: > 15W
■ High Efficiency: up to 70%
■ DC bias: V_DS = 50V @ I_{D_Q} = 100mA
■ MTTF > 10⁶ hours @ Tj = 200°C
■ RoHS Flange Ceramic package
VDS = 50V, ID_Q = 100mA, Freq = 5.6GHz
CW mode
55
1.1
PAE
50
1.0
45
0.9
40
Pout
0.8
35
0.7
30
Id
0.6
25
0.5
20
0.4
15
Gain 0.3
10
0.2
5
0.1
0
0.0
6 8 10 12 14 16 18 20 22 24 26 28 30 32 34
Input Power (dBm)
Intrinsic performances of the packaged device
Main Electrical Characteristics
Tcase= +25°C, CW mode, F = 5.6GHz, V_DS=50V, I_{D_Q}=100mA
Symbol
Parameter
Min Typ Max Unit
G_SS
P_SAT
PAE
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
15
15
18
45
50
-
dB
-
W
-
%
G_{PAE_MAX} Associated Gain at Max PAE
11
-
dB
Ref. : DSCHK015ASMA3021 - 21 Jan 13
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]