CHE1270 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 12-40GHz Wide Band Detector

CHE1270
Electrical Characteristics (1)
Tamb = +25°C, Vdc = +4.5V
12-40GHz Detector
Symbol
Parameter
F Frequency range
Dr Dynamic range
IPr Input Power range
Vdetect Voltage detection Vref – Vdet
from IPr_min to IPr_max
RL Return Loss (12 – 14.5GHz)
Return Loss (15 – 40GHz)
Vdc Bias voltage
Idc Bias current
Min Typ Max Unit
12
40 GHz
35
dB
IPr_min
-20
dBm
IPr_max
15
dBm
10
to
mV
1800
-8
dB
-10
dB
4.5
V
75
µA
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports but with 27kΩ resistor in parallel on pads Vdet and Vref.
Absolute Maximum Ratings (1)
Temp = +25°C
Symbol
Parameter
Vdc
Bias voltage
IPr_max Maximum Input power
Top
Operating temperature range
Tstg Storage temperature range
Values
6
18
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE1270-7297 - 24 Oct 07
2/6
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