CHE1270 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 12-40GHz Wide Band Detector

CHE1270
RoHS COMPLIANT
12-40GHz Wide Band Detector
GaAs Monolithic Microwave IC
Description
The CHE1270 is a detector that integrates a
matched detection diode (Vdet). A reference
diode is also available to be used in
differential mode (Vref).
RF_in
It is designed for a wide range of applications
where an accurate transmitted power control
is required, typically commercial
communication systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is available in chip form.
DC
Matching
CHE1270
Vdet
Vref
Main Features
■ Wide frequency range 12-40GHz
■ 35dB dynamic range
■ ESD protected
■ Chip size: 1.41 x 0.89 x 0.1mm
■ BCB layer protection
10000
1000
Transmitted power detection (mV)
12 GHz
32GHz
17GHz
37GHz
22GHz
40GHz
27GHz
100
10
Main Characteristics
Tamb = +25°C, Vdc = +4.5V
1
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Input power (dBm)
Symbol
Parameter
F
Frequency range
Dr Dynamic range
RL Return Loss
Min Typ Max
12
40
35
-10
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Unit
GHz
dB
dB
Ref. : DSCHE1270-7297 - 24 Oct 07
1/6
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]