CHE1270-QAG Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 12-40GHz Wide Band Detector

CHE1270-QAG
Electrical Characteristics (1)
Tamb = +25°C, VDC = +4.5V
12-40GHz Detector
Symbol
Parameter
F Frequency range
Dr Dynamic range (for Input Power detection)
IPd Input Power detection
Vdetect Voltage detection Vref – Vdet
from IPd_min to IPd_max
RL
VDC
IDC
Return Loss (12 – 36GHz)
Return Loss (36 – 40GHz)
Bias Voltage
Bias Current
Min Typ Max Unit
12
40 GHz
30
dB
-15
15 dBm
10
mV
to
2000
-10
dB
-8
dB
4.5
V
70
µA
(1) These values are representative of onboard measurements as defined on the drawing 96272-B
(page 8) with 27kΩ resistor in parallel on Vdet and Vref pads.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
VDC Bias voltage
P_max Maximum Power
Top
Operating temperature range
Tstg Storage temperature range
Values
6
18
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
2/8
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