CHE1270-QAG Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 12-40GHz Wide Band Detector

CHE1270-QAG
RoHS COMPLIANT
12-40GHz Wide Band Detector
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHE1270-QAG is a detector that
integrates a matched detector diode (Vdet)
and a reference diode (Vref).
It is designed for a wide range of applications
where an accurate transmitted power control
is required, typically commercial
communication systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is available in leadless SMD package.
UMS
E1270
YYWW
RF IN
Matching
CHE1270
Vdet
Vref
DC
Main Features
■ Wide frequency range: 12-40GHz
■ 30dB dynamic range
■ ESD protected
■ 16L-QFN3x3 SMD package
10000
1000
Transmitted power detection (mV)
12 GHz
32GHz
17GHz
37GHz
22GHz
40GHz
27GHz
100
10
Main Characteristics
Tamb = +25°C, VDC = +4.5V
1
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
Input power (dBm)
Symbol
Parameter
F
Frequency range
Dr Dynamic range
RL Return Loss
Min Typ Max
12
40
30
-10
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
1/8
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]
Unit
GHz
dB
dB