CHE1260_15 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 10-27GHz Bidirectionnal Detector

CHE1260
10-27GHz Detector
Electrical Characteristics
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
Min Typ Max Unit
F
IL
Cd
Dr
Pd
Vdetect_I
Vdetect_R
Frequency range
Insertion Loss
Coupler Directivity
Dynamic Range :
10 - 12GHz
12 - 24GHz
24 - 27GHz
Power detection:
10 - 17GHz
17 - 21GHz
21 - 24GHz
24 - 27GHz
Voltage detection from transmitted power
Vref_R – Vdet_I
From Pd_min to Pd_max
Voltage detection from reflected power
Vref_I – Vdet_R
From Pd_min to Pd_max
10
27
GHz
0.8
dB
13
dB
22
dB
20
dB
15
dB
-1
dBm
-3
dBm
-6
dBm
-8
dBm
20
3500 mV
20
3500 mV
RLin
RLout
VDC
IDC
Input return loss
Output return loss
Bias Voltage
Bias Current (on ports DC_I or DC_R)
-11
-8
dB
-11
-8
dB
4.5
V
25
33
45
µA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports but with 100kΩ resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and
Vref_R (see notes).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
VDC
Bias voltage (on ports DC_I and DC_R)
6
V
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
P_max Maximum power (for transmitted and/or reflected power)
30
dBm
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE12600197 - 16 Jul 10
2/10
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Specifications subject to change without notice