CHE1260_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 10-27GHz Bidirectionnal Detector

CHE1260
RoHS COMPLIANT
10-27GHz Bidirectionnal Detector
GaAs Monolithic Microwave IC
Description
The CHE1260 is a bidirectionnal detector
that integrates a passive bidirectionnal
coupler, two matched detection diodes and
two reference diodes.
It allows the measurement of transmitted
and reflected power. It is designed for a wide
range of applications where an accurate
transmitted power control is required,
typically commercial communication
systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is available in chip form.
Main Features
■ Wide frequency range 10-27GHz
■ Bidirectionnal detection
■ 30dB dynamic range
■ ESD protected
■ Chip size: 1.41x1.41x0.1mm
■ BCB layer protection
RF_in
5000
20
Vref_R _{DC_R} Vdet_R
RF_out
Vdet_I _{DC_I} Vref_I
10GHz
17GHz
24GHz
27GHz
Main Characteristics
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
F
Frequency range
IL Insertion Loss
Dr Dynamic Range
Min Typ Max Unit
10
27 GHz
0.8
dB
20
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHE12600197 - 16 Jul 10
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]