CHE1260 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 10-27GHz Bidirectionnal Detector

CHE1260
10-27GHz Detector
Electrical Characteristics
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
Min Typ Max Unit
F
Frequency range
IL
Insertion Loss
Cd
Coupler Directivity
Dr
Dynamic Range
Pr
Power Range:
10 - 17GHz
17 - 21GHz
21 - 24GHz
24 - 27GHz
(for transmitted and/or reflected power)
Vdetect_I Voltage detection from transmitted power
Vref_I – Vdet_I
From Pr_min to Pr_max
Vdetect_R Voltage detection from reflected power
Vref_R – Vdet_R
From Pr_min to Pr_max
RLin Input return loss
RLout Output return loss
VDC Bias Voltage
IDC Bias Current (on ports DC_I or DC_R)
10
27 GHz
0.8
dB
13
dB
30
dB
-1
-3
-6
dBm
-8
20
to
mV
2500
20
to
mV
2500
-11
dB
-11
dB
4.5
V
33
µA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports but with 100kΩ resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and
Vref_R (see notes, page 8).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values Unit
VDC
Bias voltage (on ports DC_I and DC_R)
6
V
Top
Operating temperature range
-40 to +85 °C
Tstg
Storage temperature range
-55 to +125 °C
P_max Maximum power (for transmitted and/or reflected power)
30
dBm
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE1260-8058 - 28 Feb 08
2/8
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Specifications subject to change without notice