CHE1260 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 10-27GHz Bidirectionnal Detector

CHE1260
RoHS COMPLIANT
10-27GHz Bidirectionnal Detector
GaAs Monolithic Microwave IC
Description
The CHE1260 is a bidirectionnal detector
that integrates a passive bidirectionnal
coupler, two matched detection diodes and
two reference diodes.
Vref_R _{DC_R} Vdet_R
It allows the measurement of transmitted and
RF_in
RF_out
reflected power. It is designed for a wide
range of applications where an accurate
transmitted power control is required,
typically commercial communication
systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
Vdet_I _{DC_I} Vref_I
It is available in chip form.
10000
Incident power detection (mV)
Main Features
■ Wide frequency range 10-27GHz
■ Bidirectionnal detection
■ 30dB dynamic range
■ ESD protected
■ Chip size: 1.41 x 1.41 x 0.1 mm
■ BCB layer protection (see page 8)
Main Characteristics
1000
10GHz
22GHz
12GHz
27GHz
17GHz
100
10
-15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
F
Frequency range
IL Insertion Loss
Dr Dynamic Range
Min Typ Max Unit
10
27 GHz
0.8
dB
30
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHE1260-8058 - 28 Feb 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]