CHA6250-QFG Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 5.5-9GHz Power Amplifier

CHA6250-QFG
5.5-9GHz Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +7.0V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
5.5
9 GHz
Gain Linear Gain
21 23.5 27 dB
G_T Linear Gain variation versus Temperature
-0.03
dB/°C
RL_in Input Return Loss
-18
dB
RL_out Output Return Loss
-14
dB
OP1dB Output power @1dB comp. [5.5 - 6.8GHz]
Output power @1dB comp. [6.8 - 9GHz]
32.5 33.5
31.5 32.5
dBm
dBm
Psat Saturated output power
34.5
dBm
OTOI Output TOI
43
dBm
PAE Power Added Efficiency @ 1dB compression
29
%
Idq Quiescent Drain current
900 1000 mA
Vg
Gate voltage
-0.5
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
7.5V
V
Idq Drain bias current
1.06
A
Vg
Gate bias voltage
-2 to +0
V
Pin Input continuous power
Tj
Junction temperature ⁽²⁾
15
dBm
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
VD1
30
VD2
28
VD3
25
VG
13
Parameter
DC Drain voltage 1^st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage tuned for Idq= 0.9A
Values Unit
7
V
7
V
7
V
-0.5
V
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
2/14
Specifications subject to change without notice
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