CHA6250-QFG Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 5.5-9GHz Power Amplifier

CHA6250-QFG
5.5-9GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6250-QFG is a three stages
monolithic GaAs high power circuit that
produces more than 2 Watt output power.
It is designed for commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
Main Features
■ Broadband performances: 5.5- 9GHz
■ 23.5dB Linear Gain
■ 33.5dBm output power @1dB comp.
■ 43dBm output TOI
■ 29% PAE@ 1dB compression
■ DC bias: Vd=7Volt@Id=0.9A
■ 32L-QFN5x5
Output power at 1dB comp.
36
35
34
33
32
31
Temp=25°C
Temp=-40°C
30
Temp=+85°C
29
28
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5 10
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OTOI Output TOI
Pout Output Power @1dB comp.
Min Typ Max Unit
5.5
9.0 GHz
23.5
dB
43.0
dBm
33.5
dBm
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]