CHA5296_07 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 27-30GHz High Power Amplifier

CHA5296
27-30GHz High Power Amplifier
Electrical Characteristics
Tamb = +25°C
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
27
30
GHz
G
Small signal gain (1)
16
18
dB
∆G Small signal gain flatness (1)
±1
dB
Is
Reverse isolation
50
dB
P1dB Pulsed output power at 1dB compression (1)
28
29
dBm
P03 Output power at 3dB gain compression (1)
IP3
3^rd order intercept point (2)
29
30
38
dBm
dBm
PAE Power added efficiency at Psat
12
16
%
VSWRin Input VSWR (2)
5:1
VSWRout Output VSWR (2)
2.5:1
Vd
Drain bias voltage
6
V
Id
Bias current @ small signal
850 1000 mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6.5
V
Id
Drain bias current
1450
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vgd
Negative gate drain voltage ( = Vg - Vd)
-8
V
Pin
Maximum peak input power overdrive (2)
+18
dBm
Tch
Maximum channnel temperature
175
°C
Ta
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52967144 - 24 May 07
2/6
Specifications subject to change without notice
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