CHA5296_07 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 27-30GHz High Power Amplifier

CHA5296
RoHS COMPLIANT
27-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5296 is a high gain three-stage
monolithic high power amplifier. It is designed
for a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps to simplify the assembly process.
The circuit is manufactured with a P-HEMT
process on 50µm substrate thickness, 0.25µm
gate length, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
Main Features
■ Performances: 27-30GHz
■ 29dBm output power @ 1dB comp. gain
■ 18 dB ± 1dB gain
■ DC power consumption, 850mA @ 6V
■ Chip size: 3.80 x 2.52 x 0.05 mm
20
15
10
5
S11
0
-5
-10
-15
S22
-20
20 22 24 26 28 30 32 34 36
Frequency (GHz)
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop
Operating frequency range
G
Small signal gain
P1dB
Output power at 1dB gain compression
Id
Bias current
Min Typ Max Unit
27
30
GHz
16
18
dB
28
29
dBm
850 1000 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52967144 - 24 May 07
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]