CHA5295 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 24.5-26.5GHz High Power Amplifier

CHA5295
24.5-26.5GHz High Power Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #800mA
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
24.5
26.5 GHz
G
Small signal gain (1)
16
17
dB
∆G
Small signal gain flatness (1)
±1
dB
Is
Reverse isolation
50
dB
P1dB Pulsed output power at 1dB compression (1)
29
30
dBm
P03 Output power at 3dB gain compression (1)
IP3
3^rd order intercept point (2) (3)
31
dBm
41
dBm
PAE Power added efficiency at 1dB comp.
18
%
VSWRin Input VSWR
3.5:1
VSWRout Output VSWR
2:1
Tj
Junction temperature for 80°C backside
155
°C
Id
Bias current @ small signal
800 1000 mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
(3) Linearity could be improved with a biasing point around 600mA ( see curves on next pages)
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage with Pin max=12dBm
+6.25
V
Id
Maximum drain bias current
1400
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Ig
Gate bias current
-5 to +5
mA
Vdg
Maximum drain to gate voltage (Vd - Vg)
+8.0
V
Pin
Maximum input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA529522297 -24-Oct.-02
2/8
Specifications subject to change without notice
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