CHA5012_15 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – X Band Driver Amplifier

CHA5012
X Band Driver Amplifier
Electrical Characteristics
Vc= +7.5V (Pulse 100µs 20%)
Symbol
Parameter
Min
Typ
Max Unit
Fop
Operating frequency range
9.2
10.8
GHz
G
Small signal gain at 25°C
21
22.5
dB
∆G
∆G_T
Pin
Small signal gain flatness at 25°C
Linear gain variation vs temperature
Input Power (1)
±0.5
-0.025
dB
dB/°C
17
dBm
P1dB
Output power at 1dB gain compression at 25°C
28
dBm
P3dB
Output power at 3dB gain compression at 25°C
27.5
29.5
Output power at 3dB gain compression at 80°C
27
29
dBm
PAE_3dBc PAE at 3dB gain compression at 25°C
PAE at 3dB gain compression at 80°C
40
%
37
dBS11 Input Return Loss
-12
-10
dB
dBS22 Output Return Loss
-10
-7
dB
Vc
Power supply voltage
7.5
V
Icq
Power supply quiescent current (2)
200
mA
Ic_3dBc Consumption under 3dB compression
290
mA
Vctrl
Collector current control voltage
5
V
Ictrl
Biasing circuit consumption
5
mA
I_TI
TTL input consumption
1
mA
TI_Low TTL input voltage low level
0
0.4
V
TI_High
(1)
(2)
TTL input voltage high level (2)
2.5
5
mA
Output Load 50Ω
For Vc=7.5V, TTL interface settles Icq to 200 mA when TI=TI_High . If needed, Icq can be tuned
thanks to Vctrl if the analog biasing circuit is used
Absolute Maximum Ratings (3)
Tamb = 25°C
Symbol
Parameter
Values
Unit
Top
Operating temperature range
-40 to +80
°C
Vc
Power supply voltage (4)
10
V
Icq
Ic_sat
Power supply quiescent current
Power supply current in saturation
320
mA
350
mA
Vct
Collector current control voltage
6.5
V
Tj
Maximum Junction temperature
175
°C
Tstg
Storage temperature range
-55 to +125
°C
(3) Operation of this device above anyone of these parameters may cause permanent damage.
(4) Without RF input power
Ref. DSCHA50120179 - 28 Jun 10
2/10
Specifications subject to change without notice
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