CHA5012_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – X Band Driver Amplifier

CHA5012
X Band Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5012 chip is a monolithic two-
stage medium power amplifier designed for
X band applications.
This device is manufactured using a GaInP
HBT process, including via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
• the backside of the chip is both RF
and DC grounded
• bond pads and back side are gold
plated for compatibility with eutectic
die attach method and thermosonic
or thermocompression bonding
process.
Main Features
■ Frequency band : 9.2-10.8 GHz
■ Pout @3dB Gain compression : 29.5 dBm
■ P.A.E @3dB Gain Compression : 40 %
■ Two biasing modes:
• Digital control thanks to TTL interface
• Analog control thanks to biasing circuit
■ Chip size: 2.87 x 1.47 x 0.1 mm³
Pout & PAE @ 3dB gain compression and Linear Gain
(Temperature 25°C)
Main Characteristics
Tamb = +25°C, Vc = +7.5V (Pulse 100µs 20%)
Symbol
Parameter
Fop
Operating frequency range
G
Small signal gain
P3dB
Output power at 3dB compression
Icq
Power supply quiescent current
Min Typ Max Unit
9.2
10.8 GHz
21
23
dB
29.5
dBm
200
mA
ESD Protections : Electrostatic discharge sensitive device observe handling precautions
Ref. : DSCHA50120179 - 28 Jun 10
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]