CHA3666-FAA_15 Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 6-16GHz Low Noise Amplifier

CHA3666-FAA
6-16GHz Low Noise Amplifier
Electrical Characteristics⁽¹⁾
Tamb.= +25°C, Vd1 = Vd2 = +4.0V, P1 and N2 grounded, P2: NC.
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
6
16 GHz
G
Gain
18.5 21
dB
G
Gain flatness
±1
dB
NF
Noise figure
1.8
2.5 dB
IS11I
Input return loss
7
6.5 dB
IS22I
Output return loss
10
8.5 dB
IP3
3rd order intercept point
26
dBm
P1dB
Output power at 1dB gain comp.
15
17
dBm
Vd1, Vd2 Drain bias voltage
4
V
Id
Drain bias current
60
80
100 mA
(1) _{These values are representative of on board measurements as defined on the drawing}
99622 (see below).
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage (Vd1 & Vd2)
Pin
Maximum peak input power overdrive ⁽⁴⁾
Top
Operating temperature range ⁽²⁾
Tj
Junction temperature ⁽³⁾
4.5
10
-40 to +85
175
V
dBm
°C
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Top = Package Ground Paddle back side temperature}
(3) _{Thermal Resistance channel to ground paddle =214°C/W for Tground paddle = +85°C}
(4) _{Duration < 1s.}
Ref. : DSCHA3666-FAA2356 - 21 Dec 12
2/12
Specifications subject to change without notice
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