CHA3666-FAA_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 6-16GHz Low Noise Amplifier

CHA3666-FAA
6-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3666-FAA is a two-stage
self-biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is proposed in leadless surface mount
hermetic metal ceramic 6x6mm² package.
The overall power supply is of 4V/80mA.
The circuit is dedicated to space applications
and also well suited for a wide range of
microwave and millimetre wave applications
and systems.
UMS
A3666
YYWW
Main Features
■ Broadband performance 6-16GHz
■ 1.8dB typical Noise Figure
■ 24dBm 3^rd order intercept point
■ 16dBm power at 1dB compression
■ 21dB gain
■ Low DC power consumption
■ 6x6mm² metal ceramic hermetic package
30
25
20
15
10
+25 C
+85 C
-40 C
5
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
6
16 GHz
NF
Noise figure
1.8
2.5 dB
G
Small signal Gain
18.5 21
dB
IP3
3rd order intercept point
24
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-FAA2356 - 21 Dec 12
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]