CHA3063 Datasheet, PDF (2/7 Pages) United Monolithic Semiconductors – 5.5-23GHz Driver Amplifier

CHA3063
5.5-23GHz Driver Amplifier
Electrical Characteristics on wafer
Tamb = +25°C, Vd1 = Vd2 =4V Vg tuned for Id=160mA (around –0.27V)
Symbol
Fop
Parameter
Operating frequency range
Min Typ Max Unit
5.5
23
GHz
G
Small signal gain
18
19
dB
∆G
Small signal gain flatness
±1.0
dB
Is
Reverse isolation
35
dB
P1dB
CW output power at 1dB compression (1)
+16 +18
dBm
Psat
Saturated Output Power (Pin=0dBm)
+18
+21
dBm
IP3
3 rd order intercept(2)
28
dBm
VSWRin Input VSWR
2.0:1 2.5:1
VSWRout Output VSWR
2.0:1 2.5:1
NF
Noise figure
4.5
6
dB
Id_small signal Bias current
160
210
mA
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal
5.0
V
Ids
Drain bias current_small signal
210
mA
Vg
Gate bias voltage
-2 to +0.4
V
Ig
Gate bias current
0.7
mA
Vgd
Maximun negative gate drain Voltage (Vg-Vd)
-5
V
Pin
Maximum continuous input power
Maximum peak input power overdrive (2)
+1
dBm
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref : DSCHA30632263 -20-Sept.-02
2/7
Specifications subject to change without notice
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