CHA3024-QGG_15 Datasheet, PDF (2/16 Pages) United Monolithic Semiconductors – 2-22GHz LNA with AGC

CHA3024-QGG
2-22GHz LNA with AGC
Electrical Characteristics
Tamb.= +25°C,Vg1 to be set in order to have Idq=100mA, Vg2=1.7V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
2
22 GHz
Gain Linear Gain
15
dB
ΔG Gain Control (with Vg2 variation)
30
dB
NF Noise Figure
3
dB
IRL Input Return Loss
17
dB
ORL Output Return Loss
16
dB
P1dB Output power for 1dB Gain Compression
18
dBm
Psat Saturated output power
20
dBm
OIP3 Output Third Order Intercept
28
dBm
Idq Quiescent current on Vd
100
mA
Vd Supply voltage on Vd
4.5
5
5.5
V
Id
Drain current @3dB gain compression
125
mA
The values are representative of typical “test fixture” measurements as defined on the
drawing in paragraph “Proposed Evaluation Board”.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pin
Parameter
Values Unit
Vg1
13
Gate control1 for the amplifier
-0.4
V
Vg2
1
Gate control2 for the amplifier
1.7
V
Vd
25
Drain Voltage
5
V
The associated drain current with no RF input power is Idq=100mA
This typical bias is recommended in order to get the best compromise between output
power, linearity and Noise Figure performance vs. Temperature.
Ref. : DSCHA3024-QGG-4346 - 12 Dec 14
2/16
Specifications subject to change without notice
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