CHA2394 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 36-40GHz Very Low Noise High Gain Amplifier

CHA2394
36-40GHz Very Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
36
40
GHz
G
Small signal gain (1)
18
21
dB
∆G
Small signal gain flatness (1)
±1.5
dB
∆Gsb Gain flatness over 40MHz ( within -30 ; +75°C )
0.5
dBpp
Is
Reverse isolation (1)
25
30
dB
P1dB Output power at 1dB gain compression
5
8
dBm
VSWRin Input VSWR (1)
2.5:1 3.0:1
VSWRout Output VSWR (1)
2.5:1 3.0:1
NF Noise figure (2)
2.5
3.0
dB
Vd
DC Voltage
Vd
Vg
3.5
4
V
-2
-0.25 +0.4
V
Id
Bias current (2)
60
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For
optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2
voltage.
Absolute Maximum Ratings (1)
Tamb. = 25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5.0
V
Id
Drain bias current
150
mA
Vdg
Maximum drain to gate voltage (Vd - Vg)
+5.0
V
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Pin
Maximum continuous input power
-5
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA23942240 -28-Aug.-02
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax : [phone]