CHA2292 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 17-24GHz Low Noise, Variable Gain Amplifier

17-24GHz LNA VGA
CHA2292
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd2,3,4= 5V
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain (1)
∆G Small signal gain flatness (1)
Is
Reverse isolation (1)
NF Noise figure with Vc=1.2V
Gctrl Gain control range versus Vc
P1dB Output power at 1dB compression with Vc=1.2V
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
Vd
DC voltage
V5= Vd2,3,4
Vc
Id1 Bias current (2) with Vc=1.2V
Id
Bias current total (3) with Vc=1.2V
Min
Typ Max Unit
17
24 GHz
25
dB
±1
dB
50
dB
2.8
dB
15
dB
11
dBm
3.0:1
2.5:1
5
V
-1.5 [-0.7, +1.2] +1.3 V
35
mA
160
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjusted to 35mA with Vg1 voltage.
(3) With Id1=35mA, adjust Vg2,3,4 voltage for a total drain current around 160mA.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5.5
V
Vc
Control bias voltage
1.5
V
Id
Drain bias current
250
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA22922108 - 18-Apr.-02
2/6
Specifications subject to change without notice
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