CHA2291_07 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 10-18GHz Low Noise, Variable Gain Amplifier

10-18GHz LNA VGA
CHA2291
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd2,3,4= 5V
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain (1)
∆G Small signal gain flatness (1)
Is
Reverse isolation (1)
NF Noise figure with Vc=1.2V (1)
Gctrl Gain control range versus Vc
P1dB Output power at 1dB compression with Vc=1.2V
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
Vd DC voltage
V5= Vd2,3,4
Vc
Id1 Bias current (2) with Vc=1.2V
Id
Bias current total (3) with Vc=1.2V
Min
Typ Max Unit
10
18 GHz
20
23
dB
±1
dB
60
dB
2.2
3
dB
20
25
dB
10
dBm
3.0:1
2.5:1
5
V
-1.5 [-0.7, +1.2] +1.3 V
25
mA
180
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with Vg1 voltage.
(3) With Id1=25mA, adjust Vg2,3,4 voltage for a total drain current around 180mA.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage
+5.2
V
Id
Maximum drain bias current
250
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vc
Maximum Control bias voltage
+1.5
V
Vdg
Maximum drain to gate voltage (Vd - Vg)
+5.0
V
Pin
Maximum input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA22917165 - 14 Jun 07
2/8
Specifications subject to change without notice
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