CHA2291_07 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 10-18GHz Low Noise, Variable Gain Amplifier

CHA2291
RoHS COMPLIANT
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2291 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps to simplify the
assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Frequency range: 10-18GHz
2.2dB Noise Figure.
23dB gain
Gain control range: 25dB
DC power consumption: 180mA @ 5V
Chip size: 2.49 X 1.23 X 0.10 mm
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10
Gain (dB)
NF (dB)
11
12
13
14
15
16
17
18
Frequency (GHz)
Typical on wafer measurements : Gain & NF
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
NF Noise figure
Gctrl
Id
Gain control range with Vc variation
Bias current
Min Typ Max Unit
10
18
GHz
20
23
dB
2.2
3
dB
25
dB
180
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHA22917165 - 14 Jun 07
1/8
Specifications subject to change without notice
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