CHA2194 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 36-44GHz Low Noise Amplifier

CHA2194
36-44GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +3,5V (On wafer)
Symbol
Parameter
Fop Operating frequency range
G
Gain (1)
∆G Gain flatness (1)
NF
Noise figure (1) (freq: 36-40 GHz)
VSWRin Input VSWR (1)
VSWRout Ouput VSWR (1)
IP3 3rd order intercept point
P1dB Output power at 1dB gain compression
Id
Drain bias current (2)
Min Typ Max Unit
36
44 Ghz
17
19
dB
± 0.5 ± 1
dB
3
4
dB
2.5:1 3.0:1
2:5:1 3.0:1
20
dBm
8
10
dBm
45
75
mA
(1) These values are representative of wafer measurements without bonding wire at the RF ports.
(2) This current is the typical value for low noise and low current consumption biasing :
Vd=3.5V , Vg12 and Vg3 not connected.
Absolute Maximum Ratings (3)
Tamb = +25°C
Symbol
Parameter
Vd
Drain bias voltage (5)
Vg
Vg12 and Vg3 max
Id
Drain current
Pin
Maximum peak input power overdrive (4)
Top Operating temperature range
Tstg Storage temperature range
Values
4
+1
75
15
-40 to +85
-55 to +125
Unit
V
V
mA
dBm
°C
°C
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options page 9
Ref : DSCHA21942035 -04-Feb.-02
2/10
Specifications subject to change without notice
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