CHA2194 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 36-44GHz Low Noise Amplifier

CHA2194
36-44GHz Low Noise Amplifier
Self biased
GaAs Monolithic Microwave IC
Description
The circuit is a three-stage self biased wide
band monolithic low noise amplifier,
designed for 36GHz to 44GHz point to point
and point to multipoint communication .
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Main Feature
§ Broad band performance 36-44GHz
§ 3dB noise figure
§ 19dB gain, ± 0.5dB gain flatness
§ Low DC power consumption, 45mA
§ 20dBm 3rd order intercept point
§ Chip size : 1.670 x 0.970x 0.1mm
28
25,00
26
24
22
20
18
15,00
16
14
12
10
8
5,00
6
4
2
0
-2
-5,00
-4
-6
-8
-10
-12
-15,00
-14
-16
-18
dBS21
NF
dBS11
dBS22
-20
-22
-25,00
22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60
Frequency ( GHz )
Main Characteristics
Tamb = +25°C
On wafer typical measurement
Symbol
Parameter
NF Noise figure at freq : 40GHz
G
Gain
∆G
Gain flatness
Min Typ Max Unit
3
4
dB
17
19
dB
± 0.5 ± 1
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA21942035 -04-Feb.-02
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]