CHA2193 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 20-30GHz Low Noise Amplifier

CHA2193
20-30GHz Low Noise Amplifier
Electrical Characteristics for Narrowband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
24
26
GHz
G
Small signal gain (1)
16
18
dB
∆G
Small signal gain flatness (1)
±0.5
dB
Is
Reverse isolation (1)
25
30
dB
NF
Noise figure
2.0
2.5
dB
P1dB CW output power at 1dB compression (1)
6
8
dBm
VSWRin Input VSWR (1)
1.8:1 2.0:1
VSWRout Output VSWR (1)
1.8:1 2.0:1
Vd
DC Voltage
3.5
4
V
Id
Bias current
60
100
mA
(1) These values are representative for CW on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
120
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA21939042
2/10
Specifications subject to change without notice
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