CHA2193 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 20-30GHz Low Noise Amplifier

CHA2193
RoHS COMPLIANT
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2193 is a three stages low noise amplifier.
It is designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF and
DC grounds. This helps simplify the assembly
process.
The circuit is manufactured with a HEMT process,
0.25µm gate length, via holes through the
substrate, air bridges and electron beam gate
lithography.
It is available in chip form.
Main Features
¦ 2.0 dB noise figure
¦ 18 dB ± 1dB gain
¦ 8 dBm output power (-1dB gain comp.)
¦ Very good broadband input matching
¦ DC power consumption, 60mA @ 3.5V
¦ Chip size : 2.07 x 1.03 x 0.10 mm
Main Characteristics
Tamb. = 25°C
20
18
Gain (dB)
16
14
12
10
8
6
4
NF (dB)
2
0
20 21 22 23 24 25 26 27 28 29 30 31 32 33
Frequency ( GHz )
Typical on Wafer Measurements
Symbol
Fop
G
NF
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Noise figure
Output power at 1dB gain compression
Bias current
Min Typ Max Unit
20
30
GHz
16
18
dB
2.0
2.5
dB
6
8
dBm
60
100
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA21939042
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]