CHA2192 Datasheet, PDF (2/6 Pages) United Monolithic Semiconductors – 24-26.5GHz Low Noise Amplifier

CHA2192
24-26.5GHz Low Noise Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
24
26.5 GHz
G
Small signal gain (1)
14
15
dB
∆G
Small signal gain flatness (1)
±1.0
dB
Is
Reverse isolation (1)
30
dB
NF Noise figure
1.8
2.0
dB
P1dB Pulsed output power at 1dB compression (1)
8
10
dBm
VSWRin Input VSWR (1)
2.0:1
VSWRout Output VSWR (1)
2.0:1
Id
Bias current
40
60
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
150
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA21928155
2/6
Specifications subject to change without notice
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