CHA2190 Datasheet, PDF (2/9 Pages) United Monolithic Semiconductors – 20-30GHz Low Noise Amplifier

CHA2190
20-30GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +4V (On wafer)
Symbol
Parameter
Fop Operating frequency range
G
Gain (1)
∆G
Gain flatness (1)
NF Noise figure (1)
VSWRin Input VSWR (1)
VSWRout Ouput VSWR (1)
IP3
P1dB
3rd order intercept point
Output power at 1dB gain compression (2)
Id
Drain bias current (3)
Min Typ Max Unit
20
30 Ghz
13
15
dB
± 0.5 ± 1
dB
2.2
3
dB
3.0:1
3.0:1
20
dBm
11
dBm
50
70
mA
(1) These values are representative of wafer measurements without bonding wire at the RF ports.
(2)This value is a typical value when Vd=4V Vg1=Vg2=0V or not connected and can be increased
See chip biasing option page 8
(3) This current is the typical value for low noise and low current consumption biasing :
Vd=4V , Vg1=Vg2=0V or not connected.
Absolute Maximum Ratings (4)
Tamb = +25°C
Symbol
Parameter
Vd
Drain bias voltage (6)
Vg
Vg1 and Vg2 max
Pin
Maximum peak input power overdrive (5)
Top Operating temperature range
Tstg Storage temperature range
Values
4.5
+1
15
-40 to +85
-55 to +125
Unit
V
V
dBm
°C
°C
(4) Operation of this device above anyone of these paramaters may cause permanent damage.
(5) Duration < 1s.
(6) See chip biasing options page 8/9
Ref :
DSCHA21902036 -05-Feb.-02-
2/9
Specifications subject to change without notice
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