CHA2190 Datasheet, PDF (1/9 Pages) United Monolithic Semiconductors – 20-30GHz Low Noise Amplifier

CHA2190
20-30GHz Low Noise Amplifier
self biased
GaAs Monolithic Microwave IC
Description
The circuit is a two-stages self biased wide
band monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Main Feature
§ Broad band performance 20-30GHz
§ 2.2dB noise figure
§ 15dB gain, ± 0.5dB gain flatness
§ Low DC power consumption, 50mA
§ 20dBm 3rd order intercept point
§ Chip size : 1.670 x 1.03x 0.1mm
18
14
10
6
2
-2
-6
dBS11
dBS21
dBS22
NF
-10
-14
-18
-22
-26
14 16 18 20 22 24 26 28 30 32 34 36
Frequency ( GHz )
Main Characteristics
Tamb = +25°C
On wafer typical measurement
Symbol
Parameter
NF Noise figure at freq : 40GHz
G
Gain
∆G
Gain flatness
Min Typ Max Unit
2.2
3
dB
13
15
dB
± .0.5 ± 1
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA21902036 -05-Feb.-02-
1/9
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]